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kw.\*:("LOGIQUE INTEGREE INJECTION SCHOTTKY")

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OXIDE-ISOLATED INTEGRATED SCHOTTKY LOGICHEWLETT FW JR.1980; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1980; VOL. 15; NO 5; PP. 800-802; BIBL. 5 REF.Article

A HIGH-DENSITY BIPOLAR LOGIC MASTERSLICE FOR SMALL SYSTEMSCHEN JZ; CHIN WB; JEN TS et al.1981; IBM J. RES. DEVELOP.; ISSN 0018-8646; USA; DA. 1981; VOL. 25; NO 2-3; PP. 142-151; BIBL. 15 REF.Article

MODELING OF THE DIODE INPUT 12L STRUCTUREPERLEGOS G; CHAN SP.1979; IEEE J. SOLID-STATE CIRCUITS; USA; DA. 1979; VOL. 14; NO 3; PP. 645-647; BIBL. 13 REF.Article

SCHOTTKY-BASE I2L: A HIGH-PERFORMANCE LSI TECHNOLOGYBAHRAMAN A; CHANG SY; ROMEO DE et al.1979; IEEE J. SOLID-STATE CIRCUITS; USA; DA. 1979; VOL. 14; NO 3; PP. 578-584; BIBL. 13 REF.Article

THE SCHOTTKY I2L TECHNOLOGY AND ITS APPLICATION IN A 24 X 9 SEQUENTIAL ACCESS MEMORY.HEWLETT FW JR; RYDEN WD.1977; I.E.E.E. J. SOLID-STATE CIRCUITS; U.S.A.; DA. 1977; VOL. 12; NO 2; PP. 119-123; BIBL. 8 REF.Article

Evaluation of translinear logicKEMP, A. J.Electronics Letters. 1984, Vol 20, Num 10, pp 413-414, issn 0013-5194Article

STL versus ISL: an experimental comparisonHEWLETT, F. W. JR; ERICKSON, D. A.IEEE journal of solid-state circuits. 1984, Vol 19, Num 2, pp 195-206, issn 0018-9200Article

MORPHOLOGIE EINIGER BEKANNTER BIPOLARER DIGITALER SCHALTUNGEN UND PROZESSEDE TROYE NC.1979; NACHR.-TECH. Z.; DEU; DA. 1979; VOL. 32; NO 6; PP. 382-387; BIBL. 20 REF.Article

ISL, A FAST AND DENSE LOW-POWER LOGIC, MADE IN A STANDARD SCHOTTKY PROCESSLOHSTROH J.1979; IEEE J. SOLID-STATE CIRCUITS; USA; DA. 1979; VOL. 14; NO 3; PP. 585-590; BIBL. 25 REF.Article

NEW LSI PROCESSES. OLDER PROCESSES REVAMPED AS NEW ARRIVALS EXTEND PERFORMANCE LIMITSCAPECE RP.1979; ELECTRONICS; USA; DA. 1979; VOL. 52; NO 19; PP. 109-115Article

Instrinsic gate delay of GaAs/AlGaAs single and double heterostructure I2L circuitsMAZHARI, B; MORKOC, H.Electronics Letters. 1992, Vol 28, Num 14, pp 1309-1311, issn 0013-5194Article

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